FIELD: heating.
SUBSTANCE: invention relates to heat exchange systems. It increases the efficiency of thermoelectric heat pump by the decrease in emission of parasitic Joule heat in semiconductor branches and development of conditions for extra thermal effect between hot and cold junctions made of different metals. This results from making the semiconductor p- and n-type braches as nanofilms with, in fact, zero resistance of current flowing therein owing to the high ratio between the branch cross-section and height. Production of the hot and cold junctions of two metals with different thermoelectric properties allows the conversion of parasitic thermoelectric effects between metal junctions and semiconductors into additional cooling.
EFFECT: possibility to develop heat pumps of higher efficiency at decreased sizes, particularly, sandwiched heat pumps composed by several stages.
1 dwg
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