FIELD: heating.
SUBSTANCE: p-junction semiconductor branches are located in one plane while all n-type branches are arranged in the other parallel plane. The branches of p-n type are composed by thin films to down the Joule heat release and feature the different depth. Material for metallic junctions is set different for input and output currents between the junctions and semiconductor branches with due allowance for contact phenomena between the metal and semiconductor. Besides, the heat exchange surfaces inside the thermoelectric device are used.
EFFECT: higher efficiency thanks to decrease in conductive parasitic losses between hot and cold junctions.
1 dwg
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