FIELD: electricity.
SUBSTANCE: invention relates to devices used for conversion of thermal energy into electric energy. Thermoelectric converter contains ohmic contacts, an emitter, a collector and an interval region, wherein the emitter and the interval region are made of a silicon semiconductor in the form of a mesostructure, and the converter surface is coated with a dielectric insulation film, wherein the emitter semiconductor is doped with boron, and the gap region is with gold in a concentration that provides compensation for free charge carriers in the gap.
EFFECT: invention provides higher thermal EMF and lower operating temperature.
1 cl, 2 dwg, 1 tbl
Title | Year | Author | Number |
---|---|---|---|
THERMOELECTRIC CONVERTER AND METHOD FOR HEAT ENERGY CONVERSION | 2001 |
|
RU2275713C2 |
SOLID STATE POWER CONVERTER (VERSIONS) AND METHOD OF CONVERTING THERMAL POWER INTO ELECTRIC POWER OR ELECTRIC POWER INTO FROST (VERSIONS) | 2004 |
|
RU2336598C2 |
METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE | 2013 |
|
RU2632256C2 |
THERMOELECTRIC GENERATOR BASED ON SAMARIUM SULPHIDE ALLOYED BY ATOMS OF LANTHANIDES FAMILY AND METHOD OF ITS FABRICATION (VERSIONS) | 2012 |
|
RU2548062C2 |
MULTI-CELL INFRARED HOT-CARRIER DETECTOR WITH 1/5-eV CUT-OFF | 1993 |
|
RU2065228C1 |
MULTICOMPONENT PHOTODETECTOR WITH LONG-WAVE ABSORPTION EDGE | 2000 |
|
RU2175794C1 |
THERMOELECTRIC GENERATOR (ALTERNATIVES) AND METHOD FOR ITS MANUFACTURE | 2005 |
|
RU2303834C2 |
OPTOELECTRONIC MEMORY UNIT | 0 |
|
SU1702430A1 |
METHOD OF PRODUCING P-I-N DIODE CRYSTALS BY GROUP METHOD (VERSIONS) | 2009 |
|
RU2393583C1 |
PROCESS OF MANUFACTURE OF ULTRA-VIOLET CONVERTER | 1992 |
|
RU2034372C1 |
Authors
Dates
2025-06-05—Published
2024-12-26—Filed