FIELD: physics.
SUBSTANCE: invention relates to physics of nanosized structures, namely to a method of producing thin metal films, particularly, of system Ni-Al. On the glass substrate in vacuum at residual pressure not lower than 10-5 Torr is applied at least six metal layers with thickness of 30-60 nm in a sequence of Ni/Al/Ni/Al/Ni/Al and chemical reaction between layers of multi-layer thin-film metal system by means of heating from room temperature to 600 °C with moderate rate of 1 deg/s for implementation of volumetric synthesis. Synthesis process takes place in the entire volume of the multilayer film without formation of wave synthesis. After heating to 600 °C on the x-ray image is observed reflexes of the intermetallic phase of nickel Aluminide that testifies to monophasity of thin intermetallic films.
EFFECT: disclosed is a method of producing thin metal films.
1 cl, 4 ex, 4 tbl, 5 dwg
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