FIELD: chemistry.
SUBSTANCE: method includes vacuum condensation of metal layers on a substrate and synthesis of an intermetallic compound. At least six layers are deposited on the glass substrate in the sequence Cu/Sn/Cu/Sn/Cu/Sn at residual pressure not lower than 10-5 Torr in a vacuum with thickness of each layer of 30-60 nm. Synthesis of the intermetallic compound is carried out via relaxation vacuum annealing through stage heating at a rate of 1 deg/s in the temperature range of 20°C-300°C until a thin nanocrystalline intermetallic film is obtained, with density of the intermetallic phase depending on the final heating temperature.
EFFECT: obtaining thin intermetallic films for creating nanostructured materials with regular distribution density of the intermetallic phase.
12 dwg, 4 tbl, 6 ex
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