METHOD AND DEVICE FOR REFINING TECHNICAL SILICON Russian patent published in 2016 - IPC C01B33/37 C01B31/02 C22B9/10 C30B15/00 C30B29/06 

FIELD: technological processes.

SUBSTANCE: invention relates to production of technical silicium in ore-thermal furnaces and its further refinement. Method of refining technical silicon is implemented by directed crystallization, herewith the silicon melt is cooled down to 1,420 °C, immersed for 3-30 sec with metal crystallizing molds with the initial temperature of approximately 150-200 °C, impurities of metals in form of intermetallic compounds and solid solutions with silicon are extracted on the molds surfaces, after which the molds together with the impurities are removed from the melt and moved into a superheated flux for draining of silicon enriched with the impurities. Molds are made in the form of solids of revolution - balls, cones or cylinders. Device for implementation of this method comprises a mass exchanger with molten silicon and a settler with overheated flux for accumulation of silicon with increased content of impurities. Solids of revolution can be equipped with pins to increase the surfaces of crystallization.

EFFECT: invention ensures production of high-quality and cheap raw material with low content of impurities for further mass production of ultrapure silicon (SoG-Si).

3 cl, 2 dwg