SWITCH WITH HIGH INSULATION Russian patent published in 2016 - IPC H03K3/21 H03K17/693 

FIELD: electricity.

SUBSTANCE: invention relates to electronic engineering. Switch with high insulation according to a first version comprises a differential signal generator, output ports, two pairs of MOS transistors switching signal (2-5), and one pair of MOS transistors, compensating signal 7, 6, wherein all MOS transistors have equal channel width. Switch with high insulation according to a second version comprises a differential signal generator, output ports, two pairs of MOS transistors switching signal (2-5), wherein they are made with same channel width, two MOS transistors, compensating signal (6, 7), wherein MOS transistors, switching and compensating signals, are made with different channel width.

EFFECT: reduced and suppression of parasitic signal at output, considerable increase in level of insulation of switch in off state while maintaining low losses in on state due to versions of connection of switching and compensating MOS transistors.

2 cl, 4 dwg