FIELD: electricity.
SUBSTANCE: integrated attenuator contains a differential signal generator, links consisting of parallel controlled metal-nitride-oxide-semiconductor transistor of n and p type, a control unit and a load, in addition, a non-inverting pair of links consisting of n-type and p-type metal-nitride-oxide-semiconductor transistor is connected to the differential signal generator and the load directly, and an inverting pair of links consisting of metal-nitride-oxide-semiconductor transistor of n- and p-type is connected to the differential signal generator and the load crosswise; where the resistance of the metal-nitride-oxide-semiconductor transistors entering the links is controlled by the control unit, while the resistance of one pair of metal-nitride-oxide-semiconductor transistor links increases and the other drops.
EFFECT: providing the possibility of expanding the functionality of attenuators made with CMOS technology, reducing losses in direct signal passage, increasing the dynamic range, expanding the bandwidth of operating frequencies, reducing phase distortions when switching attenuation levels.
2 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| INTEGRATED ATTENUATOR WITH DISCRETE CONTROL | 2022 |
|
RU2792262C1 |
| DIFFERENTIAL MOSFET VOLTAGE COMPARATOR | 1992 |
|
RU2019913C1 |
| HIGH-FREQUENCY PHASE SHIFTER ON MOS-TRANSISTORS | 2015 |
|
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| SOURCE OF ELECTRIC SIGNAL PROPORTIONAL TO ABSOLUTE TEMPERATURE | 1993 |
|
RU2115099C1 |
| SEMICONDUCTOR INTEGRATED CIRCUIT | 1991 |
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| ELECTRONIC RELAY WITH TRANSFORMER ISOLATION AND OVERCURRENT AND OVERHEATING PROTECTION OF ELECTRONIC KEY | 2008 |
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| INTEGRATED GRADIENT MAGNETIC TRANSISTORISED SENSOR | 2010 |
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| ELECTRONIC RELAY WITH TRANSFORMER ISOLATION AND PROTECTION FROM CURRENT OVERLOAD | 2008 |
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RU2360358C1 |
| INTEGRAL MAGNETOTRANSISTOR SENSOR WITH DIGITAL OUTPUT | 2009 |
|
RU2437185C2 |
| DEVICE WITH PROGRAMMABLE AND CONTROLLABLE REGULATION OF TRANSMISSION FACTOR | 0 |
|
SU1774469A1 |
