FIELD: physics.
SUBSTANCE: invention relates to methods of measuring magnetic field and includes affecting a silicon carbide crystal of hexagonal or rhombic polytype containing spin centers with the main quadruplet spin state, along its crystallographic axis of symmetry with focused laser radiation, low-frequency alternating magnetic field and permanent magnetic field. Herewith luminescence intensity is measured of the spin centers with the main quadruplet spin state at different values of constant magnetic field. Within the luminescence intensity change area read is the first curve of dependence of change of the luminescence intensity on constant magnetic field value and calibrated is the first curve by known value of the magnetic field in the flex point of the first curve. Then placed on the said silicon carbide crystal surface is an investigated sample and the luminescence intensity is measured of the spin centers with the main quadruplet spin state at different values of constant magnetic field. Within the luminescence intensity change area read is the second curve of dependence of change of the luminescence intensity on constant magnetic field value and the value of magnetic field created by the analyzed sample in the focal point of laser radiation is determined by the value of the horizontal shift of the second curve relative to the first curve.
EFFECT: technical result is the increase of accuracy of measurements, as well as elimination of heating of the analyzed object.
4 cl, 4 dwg
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Authors
Dates
2016-11-10—Published
2015-08-12—Filed