FIELD: measurement technology.
SUBSTANCE: method includes the preliminary construction of the experimental calibration curve depending on the temperature values of the magnetic field at the point of anticrossing of the levels (ACL) of the energy of spin centers with quadruplets excited spin state S = 3/2 contained in the crystal of Silicon Carbide. Then, on the surface of the crystal is placed the sample and measure the luminescence intensity of the spin centers with quadruplets excited spin state S = 3/2 at different values of the constant magnetic field. In the luminescence intensity change read in the curve of dependence of the change of luminescence intensity of the constant magnetic field and determine by the point of ACL of the energy the spin centers the magnetic field. On the found value of magnetic field using a calibration curve determine the temperature at the point of the surface of the sample corresponding to the point of focus of the laser radiation.
EFFECT: ways to simplify and improve the accuracy of measurements.
5 cl, 7 dwg
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Authors
Dates
2017-04-24—Published
2015-12-01—Filed