FIELD: machine building.
SUBSTANCE: invention relates to a solid-state image sensor and image sensing system. Sensor comprises image sensing unit including blocks of pixels, and readout unit for reading a signal from the image sensing unit. Pixel unit includes a photoelectric converter, first and second transistors and current source. First main electrodes of the first and second transistors are connected to the common node, and the current source is provided between the common node and the predetermined voltage. Signal read procedure includes an operation in which the voltage, corresponding to the charge in the photoelectric converter, is supplied to the control electrode of the first transistor, and varying in time reference voltage is supplied to the control electrode of the second transistor. Reading unit reads a signal from the image sensing unit via the second main electrode of the first transistor.
EFFECT: invention provides higher accuracy of reading a pixel signal.
21 cl, 24 dwg
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Authors
Dates
2016-11-27—Published
2015-03-26—Filed