PIXEL CIRCUIT, SOLID-STATE IMAGING DEVICE AND CAMERA SYSTEM Russian patent published in 2013 - IPC H04N5/335 

FIELD: information technology.

SUBSTANCE: pixel circuit includes first, second and third field-effect transistors that are combined and connected in series between a photoelectric converting element and one side of a gain circuit. The first and second field-effect transistors have gate electrodes to be excited concurrently. The threshold voltage of the first field-effect transistor is set higher than the threshold voltage of the second field-effect transistor. During step-by-step excitation of gate electrodes, electrons generated by the photoelectric converting element and transmitted through the first field-effect transistor accumulate in the channel region of the second field-effect transistor. Electrons accumulated in the channel region are transmitted to the input of the gain circuit through the third field-effect transistor.

EFFECT: high sensitivity of the imaging device.

17 cl, 33 dwg