FIELD: technological processes.
SUBSTANCE: invention relates to a method of gas-discharge formation of films. By means of high-voltage pulses with pulse duration at half-height of not more than 10 ns and rise time of not more than 4 ns, a discharge is formed, which is initiated by an electron beam in gas media at pressure of 100 Torr to atmospheric pressure. In gap between high-voltage sputtered electrode with a head, which has a curvature radius equal to 0.2 mm, and conducting surface for sputtering, which is simultaneously exposed to electron beam, shock wave, ultraviolet and vacuum UV plasma radiation accompanying discharge.
EFFECT: simplified procedure of sputtering a film.
1 cl, 2 dwg, 1 ex
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