FIELD: nanotechnologies.
SUBSTANCE: auxiliary layer, in which groove rows are formed of nanometer depth with vertical walls, is applied to a supporter; the layer of a catalyst material of nanometer thickness, on the top of which a photoresist mask with a pattern of narrow strips located aslant the grooves is formed, is applied; the layer of the catalyst material is removed by means of anisotropic etching up to the auxiliary layer retaining it on the side walls of the grooves and under the mask. The mask is removed. Supporters with nanowires are orderly allocated in a reactor.
EFFECT: increasing of end product output, consumption reducing of expensive catalyst material, and reducing of gas-dynamic resistance of the reactor.
4 cl, 1 dwg
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