FIELD: microelectronics, micro- and nano-technology.
SUBSTANCE: proposed method for producing submicron and nanometric structure includes formation of embossed structures on substrate surface, application of film to reduce embossed structure size to submicron and nanometric dimensions, and etching, anisotropic and selective relative to film material and source embossed layer, in chemically active plasma of structure obtained together with substrate material until embossed structure of submicron and nanometric dimensions, twice as deep as its width, is obtained.
EFFECT: provision for transferring mask pattern to bottom layer of substrate measured in terms of submicron and nanometric values.
2 cl, 3 dwg
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