METHOD OF MANUFACTURING INERTIAL SENSITIVE ELEMENTS OF MICROELECTROMECHANICAL SYSTEMS Russian patent published in 2025 - IPC B81C1/00 H01L21/20 

Abstract RU 2835761 C1

FIELD: precision instrument making.

SUBSTANCE: invention relates to the field of precision instrument making and can be used for manufacturing of inertial sensitive elements (SE) of microelectromechanical systems (MEMS). Method consists in performing a set and sequence of technological operations, providing the formation of an array of inertial MEMS SE, consisting of a base, an instrument layer and a cover, which are made from silicon plates and silicon-on-insulator (SOI) structures, consisting of an instrument layer, a dielectric layer and a sacrificial layer. In the disclosed method, it is also proposed to simultaneously make cavities in the dielectric layer of the base plate both for the movable structure and in the area of the contacts output, wherein in contact output area there is formed cavity up to silicon layer, as well as layers of silicon dioxide and photoresist of certain thickness are formed during creation of two-layer protective mask for plasma-chemical etching of instrument layer.

EFFECT: expansion of technological capabilities of manufacturing MEMS SE.

1 cl, 5 dwg

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RU 2 835 761 C1

Authors

Karanin Nikita Sergeevich

Iulmetova Olga Sergeevna

Evstifeev Mikhail Illarionovich

Shcherbak Aleksandr Grigorevich

Mashichev Vladislav Aleksandrovich

Dates

2025-03-03Published

2024-11-08Filed