METHOD TO MANUFACTURE NANOSIZED WIRE SILICON STRUCTURES Russian patent published in 2011 - IPC B82B3/00 H01L21/308 

FIELD: nanotechnologies.

SUBSTANCE: invention relates to the technology of manufacturing silicon micro- and nanoelectronic devices. Concept of the invention is as follows: in the method of manufacturing nanosized wire silicon structures on a silicon substrate the following layers are arranged in series - a layer of SiO₂, a layer of silicon and then a support layer, on which a relief is formed with vertical walls in areas of future arrangement of nanosized elements by methods of photolithography and by ion-plasma etching, a layer of material is formed on the produced relief conformally to generate a spacer, which is removed from horizontal surfaces by anisotropic etching, and its part adjacent to vertical walls of the relief is used as a mask in anisotropic etching of nanosized silicon structures, besides, the support layer is a relief with vertical walls in silicon, the conformal layer is created by thermal oxidation of the silicon surface, and the mask in etching of nanosized silicon structures is an oxidised vertical surface of the relief of the conformal layer on silicon.

EFFECT: increased efficiency of method.

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