FIELD: electricity.
SUBSTANCE: beta-voltage semiconductor power generator, comprising a plate with a developed surface made of a plurality of micropores having a different shape. Nickel-63 covers the walls of the micropores and the rest of the surface of the plate with the highest level of radioactivity. Semiconductor wafer with a textured surface having deaf micropores and "wells", filled with a layer of zinc metal is fixed on a steel plate, having magnetic properties; then it is placed in an aqueous nickel chloride solution-63 for 8-10 hours at a temperature of 10-20°C and pH 4,5. The level of radioactivity on the plate surface when applying the present method may reach 10 mCu/cm2.
EFFECT: ability to create a beta-voltage electricity generator with high power consumption, with service life of 50-70 years, with a minimum of labour input spent on the production of the product.
2 cl; 3 dwg
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