QUANTUM-RADIOISOTOPE GENERATOR OF MOBILE CHARGE CARRIERS AND PHOTONS IN CRYSTAL SEMICONDUCTOR LATTICE Russian patent published in 2018 - IPC H01L33/04 

FIELD: physics.

SUBSTANCE: quantum-radioisotope generator of mobile charge carriers and photons in the crystal semiconductor lattice based on the contact energy radioactive materials-isotopes that emit electrons with energies of up to 220 keV, and more, with silicon crystals with interatomic covalent bonds, contains a high-alloyed single-crystal substrate of n⁺-type conductivity, a high-resistance layer of n-type conductivity, and a heavy-doped layer of p⁺-type conductivity with a submicron thickness consistently made thereon, forming a flat or raised surface of the p-n transition with a built-in space charge region within the boundaries of the physical p-n transition, which is without the influence of an externally applied electric field as well as ohmic contacts to the high-alloyed regions of both types of conductivity, including those locally performed to the irradiated crystal surface, with the aim of a sharp increase in the generation efficiency of the mobile charge carriers and photons of the quantum radiation in the crystal and improve of the stability and reliability of the p-n transition to radiation of the emitted electrons, the semiconductor crystal is performed from the atomic ion associated with the direct interband transition type gallium arsenide, obtained by liquid-phase epitaxy and doped with amphoteric impurity atoms of silicon or germanium, or with both at the same time, containing inside-located physical p-n transition with a built-in i-space charge region, the width of which is not less than the mean free path of the electrons emitted by the isotope in the crystal of gallium arsenide, the transitive n ^- and p^-regions of the physical p-n transition with the submicron or nanometer high-alloyed, respectively, one-type n⁺- and p⁺-type regions of gallium arsenide grown thereon, wherein the contact isotopic material is performed as to either side of the crystal with p-n transition and simultaneously to both sides of a crystal with the p-n transition.

EFFECT: providing the possibility of increasing the generation efficiency of the mobile charge carriers and photons of quantum radiation in a crystal, and increasing the stability and reliability of the p-n transition to the radiation effect of emitted electrons.

5 cl, 6 dwg