BETA-VOLTAIC SEMICONDUCTOR ELECTRIC ENERGY GENERATOR Russian patent published in 2017 - IPC H01L31/04 

FIELD: electricity.

SUBSTANCE: invention relates to semiconductor engineering, particularly to development of compact power sources using radioactive isotopes and semiconductor converters. Beta-voltaic semiconductor electric energy generator has a semiconductor plate with developed surface structure, containing macropores, composed of the blind holes-"wells", and a layer of nickel-63, covering the semiconductor plate; at that, in the blind holes-"wells", on their side surfaces micropores in the form of lateral chambers are formed, wherein nickel-63 covers the surface structure and the remaining part of the surface of the semiconductor plate by a layer of 0.03–0.05 nm. Walls of blind micropores and "wells" have an arbitrary fractality, shape and volume of expansion chambers, they are made with the help of local laser destruction.

EFFECT: invention provides the possibility of formation of beta-voltaic power generator with high energy output, service life of 50–70 years, with minimum labour intensity required for manufacture of the article.

1 cl, 3 dwg