BETA-VOLTAIC SEMICONDUCTOR ELECTRIC ENERGY GENERATOR AND METHOD OF MAKING SAME Russian patent published in 2017 - IPC H01L31/04 H01L31/18 G21H1/06 

FIELD: electricity.

SUBSTANCE: beta-voltaic semiconductor electric energy generator, comprising a semiconductor plate with developed surface and a layer of nickel-63 on said surface. Surface of semiconductor plate is made in form of a plurality of micro pores and "wells", having a different shape, wherein nickel layer covers walls of micro pores and total surface to 95–99 %. Semiconductor surface has micropores with dimensions: width – 20÷40 nm, length – 400÷600 nm; depth – 100÷250 nm; amount of pores to 2,500–3,000 per 1 cm². Method of producing beta-voltaic generator includes a step of applying a radioactive substance in micropores of semiconductor plates with developed surface, wherein a layer of metallic zinc is sputtered, and plate is then placed in an aqueous solution of nickel-63 for 8–60 hours at 10–50 °C and pH 4.5.

EFFECT: invention enables to design a beta-voltaic power generator with high energy output, service life of 50–70 years, with minimum labour intensity required for manufacture of article.

3 cl, 3 dwg