FIELD: measuring equipment.
SUBSTANCE: method of determining the parameters of the semiconductor structure, consisting of semi-insulating substrate coated with the highly-doped layer, includes placing the semiconductor structure at the border of the violated central layer of one-dimensional waveguide microwave photonic crystal, completely filling the rectangular waveguide in cross section, irradiating the photonic crystal with the electromagnetic radiation of microwave range, measuring the frequency dependence of the reflection coefficients and transmission of electromagnetic radiation of microwave range, measuring is carried out at two different orientations of the semiconductor structure relative to the direction of propagation of electromagnetic waves: "highly-doped layer - semi-insulating substrate" and "semi-insulating substrate - highly-doped layer", the thickness values of the semi-insulating substrate, thickness and conductivity of the highly-doped layer are calculated, in which the measured frequency dependences of coefficients of reflection and transmission of electromagnetic radiation at two different orientations of the semiconductor structure are the closest to the theoretical frequency dependencies, then the semiconductor structure is located after the photonic crystal is perpendicular to the wide wall of the waveguide at the center of its cross section, the photonic crystal is irradiated with electromagnetic radiation of microwave range, the frequency dependences of the reflection and transmission coefficients of electromagnetic radiation of microwave range are measured, the semiconductor structure is subjected to the influence of external magnetic field, the magnetic induction vector
EFFECT: providing the possibility to define four parameters of semiconductor structures.
12 dwg
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Authors
Dates
2017-06-16—Published
2015-11-25—Filed