METHOD OF MEASURING PARAMETERS OF SEMICONDUCTOR STRUCTURES Russian patent published in 2017 - IPC H01L21/66 

FIELD: measuring equipment.

SUBSTANCE: method of determining the parameters of the semiconductor structure, consisting of semi-insulating substrate coated with the highly-doped layer, includes placing the semiconductor structure at the border of the violated central layer of one-dimensional waveguide microwave photonic crystal, completely filling the rectangular waveguide in cross section, irradiating the photonic crystal with the electromagnetic radiation of microwave range, measuring the frequency dependence of the reflection coefficients and transmission of electromagnetic radiation of microwave range, measuring is carried out at two different orientations of the semiconductor structure relative to the direction of propagation of electromagnetic waves: "highly-doped layer - semi-insulating substrate" and "semi-insulating substrate - highly-doped layer", the thickness values of the semi-insulating substrate, thickness and conductivity of the highly-doped layer are calculated, in which the measured frequency dependences of coefficients of reflection and transmission of electromagnetic radiation at two different orientations of the semiconductor structure are the closest to the theoretical frequency dependencies, then the semiconductor structure is located after the photonic crystal is perpendicular to the wide wall of the waveguide at the center of its cross section, the photonic crystal is irradiated with electromagnetic radiation of microwave range, the frequency dependences of the reflection and transmission coefficients of electromagnetic radiation of microwave range are measured, the semiconductor structure is subjected to the influence of external magnetic field, the magnetic induction vector , which is directed perpendicular to the narrow wall of the waveguide, the photonic crystal is irradiated with electromagnetic radiation of microwave range, the frequency dependences of the reflection and transmission coefficients of electromagnetic radiation of the microwave range are measured, when subjected to the magnetic field, the mobility value of free charge carriers is calculated in the highly-doped layer, wherein the measured frequency dependences of the reflection and transmission coefficients of electromagnetic radiation in the absence of an external magnetic field and when exposed to the magnetic field with induction B are the closest to the theoretical frequency dependences obtained taking into account the calculated thickness values of the semi-insulating substrate, thickness and conductivity of the highly-doped layer.

EFFECT: providing the possibility to define four parameters of semiconductor structures.

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