FIELD: electricity.
SUBSTANCE: method consists in exposure of semiconductor layer to SHF range radiation and measurement of dependence of SHF-range reflection coefficient in selected frequency range at the first and second values of temperature, calculation of parameters for semiconductor layer (d, σ) at which theoretical dependence of electromagnetic radiation reflection coefficient has the closest value to the measured one; using known temperature dependence a target couple of parameters (d, σ) is determined at which theoretical frequency dependence of electromagnetic radiation reflection coefficient has the closest value to the measured one at the second temperature value.
EFFECT: possibility of simultaneous determination of conductivity and thickness of semiconductor layer.
3 dwg, 2 tbl
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