METHOD OF DETERMINING THICKNESS, CONDUCTIVITY, EFFECTIVE MASS, SCATTERING COEFFICIENTS OF POWER-CHARGE CARRIERS, CONCENTRATION AND ENERGY OF ACTIVATING SEMICONDUCTOR LAYER DOPANT Russian patent published in 2017 - IPC H01L21/66 G01N22/00 

FIELD: measuring equipment.

SUBSTANCE: method for determining the parameters of a semiconductor layer in a dielectric-semiconductor layer to be measured includes irradiating the structure with microwave electromagnetic radiation, measuring the reflection spectrum of radiation from the structure in a selected frequency range for a number of different temperatures, determining the thickness d_nn and the electrical conductivity σ of the semiconductor layer at a temperature T₃, Which is characterized by preferential scattering of charge carriers by phonons, as a result of solving the inverse problem, according to the solution of Known d_nn is determined in the temperature range from the value of T₁, which is characterized by a change in the electrical conductivity due to ionization of the impurity, up to a value that is characterized by preferential scattering of charge carriers by phonons, determine the temperature T₀ of the total impurity ionization at which the maximum value is taken, to determine the required parameters determine the range of physically significant temperatures, the middle of which is the value of temperature T₀, and the minimum value - T₁, then by the dependence σ(T) in the range of physically significant temperatures, solving the inverse problem with the use theoretical dependence σ(T, ΔW, m*, N, b₁), the activation energy ΔW is found, the effective charge mass m*, the concentration of impurity centers N, the parameter b₁, which determines the scattering coefficient for impurity ions, and then for known ΔW, m*, N, b₁ calculate the dependence of the scattering coefficient of charge carriers on phonons a (T) and the scattering coefficient of charge carriers on ions b.

EFFECT: reducing labour time and determine the parameters of the semiconductor by reducing the number of measurements carried out.

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