ELECTROPHYSICAL MEASUREMENT METHOD FOR NANOSCALE METAL FILM ON SEMICONDUCTOR OR DIELECTRIC SUBSTRATE STRUCTURE Russian patent published in 2009 - IPC G01N22/00 

Abstract RU 2349904 C1

FIELD: physics.

SUBSTANCE: metal film semiconductor or dielectric substrate structure is mounted behind one-dimensional photon crystal consisting of alternating layers of various dielectric permeability values damaged geometry with planes perpendicular to electromagnetic radiation propagation direction and parallel to plane of measured metal film on substrate structure.

EFFECT: extended range of measured thicknesses and class of investigated materials though increasing size of changing reflectivity factor and transmission coefficient, higher sensitivity and possibility for measurements in narrow frequency range.

4 dwg

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RU 2 349 904 C1

Authors

Usanov Dmitrij Aleksandrovich

Skripal' Aleksandr Vladimirovich

Abramov Anton Valer'Evich

Bogoljubov Anton Sergeevich

Skvortsov Vladimir Sergeevich

Merdanov Merdan Kazimagomedovich

Dates

2009-03-20Published

2007-09-13Filed