METHOD OF MEASURING STRUCTURE PARAMETERS "METALLIC-SEMICONUCTOR FILM OR INSULATING SUBSTRATE" Russian patent published in 2008 - IPC G01N22/00 G01B15/02 

FIELD: thin films technology and multi-layer nano-structures.

SUBSTANCE: "metallic film - semiconductor or insulating substrate" structure is exposed to microwave radiation using a wave guide system. In front of the structure there is a dielectric plate with thickness L, and dielectric coefficient ε_d, for which, in the chosen frequency range on one of the frequencies ω₁, the condition holds, and on another frequency ω₂, the condition holds, where a is the typical size of the cross-section of the wave guide system, ω=2πf is the angular frequency of the radiation, and ε₀ and μ₀ are the dielectric and magnetic permittivity in a vacuum, respectively. Relative dielectric permittivity of the chosen dielectric plate should be more than 2. Electro-conductivity or thickness of the metallic film is determined from the frequency response of the reflection coefficient of the structure.

EFFECT: broader range of the measured thickness and class of the analysed materials and increased sensitivity.

2 cl, 6 dwg