FIELD: physics.
SUBSTANCE: method for manufacturing a matrix substrate for a TFT LCD, comprising: a) forming a gate electrode, a gate layer, an active layer, a source electrode and a drain electrode, a passivation layer, and a transition passage in a passivation layer over a drain electrode on a glass substrate; b) spraying the ITO film onto the glass substrate treated in step a), removing, by exposing and developing, the photoresist in the TFT region beyond the pass-through in the passivation layer and the photoresist portion in the pixel region where the gaps should be formed and opening the ITO - films outside the passage in the passivation layer in the TFT region; c) removal of the remaining photoresist in the pixel region where gaps should be formed, by the fourth dry etching to open the ITO film on the gaps that need to be formed; d) removing the open ITO film by third wet etching, and e) stripping the still not removed photoresist, and forming an ITO electrode that is connected to the passivation hole of the passivation layer.
EFFECT: providing the possibility of increasing the transmittance.
13 cl, 5 dwg
