FIELD: electrical engineering.
SUBSTANCE: substrate of the matrix of thin-film transistors includes a region of location of pixel electrodes, a region of the location of data electrodes, a transparent layer of pixel electrodes formed in the region of the location of pixel electrodes, a first metal layer, a first dielectric layer, an amorphous silicon layer, a second metal layer, a second dielectric layer formed in the region of the location of pixel electrodes and the location of data electrodes. Said first dielectric layer covers the first metal layer. Said amorphous silicon layer, second metal layer, and second dielectric layer are sequentially formed on the first dielectric layer. Said transparent layer of pixel electrodes is connected to the second metal layer by a through hole formed in the region of the electrodes of the pixels of the second dielectric layer. Said substrate of the matrix of thin-film transistors includes a photoresist layer formed between the first dielectric layer and the amorphous silicon layer. Also, a method for manufacturing a matrix substrate of thin-film transistors and a liquid crystal display including a matrix substrate of thin-film transistors are provided.
EFFECT: invention provides for the production of thin-film transistors for liquid crystal displays providing such display effects as high speed, high brightness and high contrast.
6 cl, 6 dwg
