THIN-FILM TRANSISTOR OF LOW-TEMPERATURE POLYCRYSTALLINE SILICON AND THE METHOD OF ITS PRODUCTION Russian patent published in 2017 - IPC H01L21/336 H01L29/786 

FIELD: electricity.

SUBSTANCE: thin-film transistor of low-temperature polycrystalline silicon includes, at least, a gate layer, which is a composite insulating layer comprising, at least, three dielectric layers, the density of each dielectric layer being successively increased in the order, in which they are formed in the manufacturing method. Since the relationship between the density of each layer of the composite insulating layer and the density of its other layers is taken into account in accordance with the present invention, each layer in the composite insulating layer of the thin-film transistor of low-temperature polycrystalline silicon made by the method of the present invention has improved surface contact and conductivity properties of the thin film. The film thickness of each layer in the composite insulating layer is also taken into account.

EFFECT: parasitic capacitance can be effectively reduced and the transistor trigger speed can be increased, by improving the quality of the film formation of the gate layer, the electrical performance and reliability of the thin-film transistor of low-temperature polycrystalline silicon can be improved.

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