FIELD: physics.
SUBSTANCE: method involves growing germanium crystals from a melt containing main dopant impurity - stibium and additional one - silicon, in an amount from 1.3⋅1020 cm-3 to 3⋅1020 cm-3 by dissolving silicon rods during the crystal growth.
EFFECT: increased temperature stability of optical properties of germanium monocrystals.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| GROWING OF GERMANIUM CRYSTALS | 2014 |
|
RU2563484C1 |
| METHOD OF MAKING SILICON CRYSTALS | 2011 |
|
RU2473719C1 |
| METHOD OF GERMANIUM SINGLE CRYSTALS GROWING BY OTF METHOD | 2006 |
|
RU2330127C2 |
| PRODUCTION OF THERMOELECTRIC MATERIALS BASED ON BISMUTH AND STIBIUM TELLURIDES | 2014 |
|
RU2579389C2 |
| SINGLE CRYSTAL GROWING PROCESS | 2003 |
|
RU2241792C1 |
| METHOD OF CLEANING MELT SURFACE WHEN GROWING GERMANIUM MONOCRYSTALS | 2017 |
|
RU2641760C1 |
| PROCESS OF PRODUCTION OF SILICON DOPED WITH ANTIMONY | 2001 |
|
RU2202656C2 |
| DEVICE FOR GROWTH OF MONOCRYSTALS FROM MELT BY VERTICAL PULLING TECHNIQUE | 2013 |
|
RU2534103C1 |
| GROWTH METHOD OF PARATELLURITE CRYSTALS OF POLYGONAL SHAPE, AND DEVICE FOR ITS IMPLEMENTATION | 2012 |
|
RU2507319C1 |
| METHOD OF PREPARING SILICON CRYSTALS WITH CYCLIC TWIN STRUCTURE | 2002 |
|
RU2208068C1 |
