FIELD: metallurgy.
SUBSTANCE: this process comprises growing of germanium crystals from the melt containing the main alloying admixture, stibium, and two extra admixtures, silicon and tellurium, added to the melt in amounts to their concentration therein of 0.5·1020-1.2·1020 cm-3 and 1·1019-5·1019 cm-3, respectively.
EFFECT: higher thermal stability of optical properties.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR GROWING GERMANIUM MONOCRYSTALS | 2016 |
|
RU2626359C1 |
| METHOD FOR PR0DUCTION OF ALLOYED MONOCRYSTALS OR POLYCRYSTALS OF SILICON | 2003 |
|
RU2250275C2 |
| METHOD OF GERMANIUM SINGLE CRYSTALS GROWING BY OTF METHOD | 2006 |
|
RU2330127C2 |
| METHOD OF GROWING GERMANIUM MONOCRYSTALS WITH DIAMETRE OF UP TO 150 mm USING OTF METHOD | 2008 |
|
RU2381305C1 |
| METHOD OF MAKING SILICON CRYSTALS | 2011 |
|
RU2473719C1 |
| METHOD FOR GROWING SINGLE CRYSTALS OF PROFILED RADIAL GERMANIUM | 2016 |
|
RU2631810C1 |
| METHOD OF GROWING CRYSTALS | 2002 |
|
RU2199614C1 |
| PROCESS OF PRODUCTION OF SILICON DOPED WITH ANTIMONY | 2001 |
|
RU2202656C2 |
| METHOD FOR VACUUM SPUTTERING OF STRUCTURES FOR ELECTRONIC DEVICES, METHOD OF CONTROLLING DOPANT CONCENTRATION WHEN GROWING SAID STRUCTURES AND RESISTIVE SOURCE OF VAPOUR OF SPUTTERING MATERIAL AND DOPANT FOR REALISING SAID CONTROL METHOD, AND METHOD FOR VACUUM SPUTTERING OF SILICON-GERMANIUM STRUCTURES BASED ON USE OF SAID VAPOUR SOURCE | 2012 |
|
RU2511279C1 |
| METHOD OF CRYSTALLIZATION OF LARGE-SIZED ALLOYED GERMANIUM INGOTS IN THE FORM OF DISKS AND PLATES AND A DEVICE FOR ITS IMPLEMENTATION | 2022 |
|
RU2791646C1 |
