PROCESS OF PRODUCTION OF SILICON DOPED WITH ANTIMONY Russian patent published in 2003 - IPC

FIELD: semiconductor technology. SUBSTANCE: invention refers to production of silicon doped with antimony and widely used in manufacture of substrates for epitaxy. In correspondence with invention silicon melt containing doping impurity of antimony in concentration of 0.3-1.4 per cent by mass is injected with second impurity- germanium, undoped or doped with isovalent impurity or element of group V in concentration of 0.08-1.8 per cent by mass with respect to silicon. Growing is carried out by Czochralski method. EFFECT: improved quality of produced substrates. 1 tbl