FIELD: electricity.
SUBSTANCE: invention provides a switching thin-film transistor (TFT), which includes a gate, a drain, a source, a semiconductor layer, and the fourth electrode, the drain being connected to the first signal, the gate being connected to the control signal to control when the TFT is switched on or off, the source outputs the first signal when the TFT is turned on, the fourth electrode and the gate are respectively located on the two sides of the semiconductor layer, and the fourth electrode is conductive and selectively connects to voltages of different levels, wherein the first signal is a control signal, and the source is connected to the tested line scan or data line.
EFFECT: reducing the leakage current in the channel of the switching TFT to improve the switching performance when the thin film transistor is turned off.
9 cl, 6 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| PROCESS OF MANUFACTURE OF DIELECTRIC PARTS WITH HOLES | 1990 |
|
RU1762690C |
| METHOD OF MAKING A SUBSTRATE MATRIX FOR THE LCD DISPLAY WITH ACTIVE MATRIX (TFT) AND PANEL/LCD DISPLAY DEVICE OBTAINED BY THIS METHOD | 2013 |
|
RU2623187C1 |
| DEVICE FOR AMPLIFYING SIGNAL FROM MATRIX PHOTODETECTOR CELL | 2016 |
|
RU2616222C1 |
| DISPLAY DEVICE AND OPERATION METHOD THEREOF | 2009 |
|
RU2488154C1 |
| ELECTRONIC SWITCHING DEVICE AND SUCH DEVICE MANUFACTURE METHOD | 2008 |
|
RU2475893C2 |
| SEMICONDUCTOR STORAGE | 1998 |
|
RU2216819C2 |
| FIELD TRANSISTOR | 2005 |
|
RU2358355C2 |
| MATRIX SUBSTRATE AND LIQUID CRYSTAL PANEL | 2013 |
|
RU2621857C1 |
| SEMICONDUCTOR DEVICE, METHOD OF ITS MANUFACTURING AND DISPLAY DEVICE | 2009 |
|
RU2471265C1 |
| THIN-FILM TRANSISTOR, MATRIX SUBSTRATE AND DISPLAY PANEL | 2013 |
|
RU2627934C1 |
