FIELD: information recording and storage. SUBSTANCE: semiconductor storage incorporates storage unit formed by gate of transistor built on semiconductor substrate and multilayer structure comprising semiconductor layers and disabling layers as insulators which is formed on storage unit. Information recording in storage unit or its erasure from storage unit are carried out thanks to injection of charges into storage unit through multilayer structure and correspondingly due to removal of charges from storage unit through multilayer structure. EFFECT: development of semiconductor storage displaying long-term memory and simultaneously stable and high-speed operation. 9 cl, 35 dwg
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