ELECTRONIC SWITCHING DEVICE AND SUCH DEVICE MANUFACTURE METHOD Russian patent published in 2013 - IPC H01L51/10 B82B1/00 

FIELD: electrical engineering.

SUBSTANCE: electronic switching device contains source and drain electrodes, a semiconductor structure ensuring a semiconductor channel between the source and drain electrodes and a gate electrode separated from the semiconductor structure with the gate dielectric structure; the gate dielectric structure includes the first nonconformal polymer dielectric layer positioned so that to contact the semiconductor structure and the second conformal dielectric layer positioned between the first dielectric layer and the date electrode.

EFFECT: reduction of thin-film transistor structures defects due to short-circuiting via the gate dielectric.

9 cl, 4 dwg