DUAL-SPECTRUM MATRIX INFRARED RADIATION ARRAY DETECTOR FOR OPTOELECTRONIC SENSORS Russian patent published in 2017 - IPC H01L31/42 

FIELD: physics.

SUBSTANCE: radiation detector includes a thin-film array structure of photogalvanic cells, provided with optical filters and based on lead selenide, on a substrate. The thin-film arrau structure is formed from not less than four identical modules, each of which includes two photogalvanic cells with two different optical filters belonging to two different spectral channels of the sensitivity of the radiation detector. The modules are placed on a substrate around a single center in a circumferential direction in congruent circular sectors so that the boundaries of the sensitive areas of the two photogalvanic cells, constituting one module, are symmetrically positioned relative to the bisector of the central angle of the corresponding sector, and the photogalvanic cells of the two different spectral channels alternate in circumference.

EFFECT: increase in noise immunity and measurement accuracy.

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