FIELD: physics.
SUBSTANCE: method of making a lead selenide-based semiconductor structure, having a substrate and a lead selenide film, involves forming a polycrystalline lead selenide film and subsequent heat treatment thereof in an oxygen-containing medium, wherein according to the invention, the polycrystalline lead selenide film is formed on a substrate made from material having a temperature coefficient of linear expansion ranging from 10·10-6 °C-1 to 26·10-6 °C-1.
EFFECT: invention enables to form lead selenide-based photosensitive and emitting structures.
6 cl, 3 ex, 3 dwg
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