METHOD FOR APPLYING THIN LAYER OF AMORPHOUS SILICON Russian patent published in 2017 - IPC C23C16/24 C23C16/455 

FIELD: chemistry.

SUBSTANCE: method for applying a thin layer of amorphous silicon onto a substrate includes providing contact of the substrate surface with a photosensitive substance containing silicon and directing ultraviolet radiation to the contact surface of the substrate with a silicon-containing photosensitive substance, which ensures execution of photochemical reaction with formation of an amorphous silicon layer. Silicon halide is used as a photosensitive substance containing silicon, ultraviolet radiation with a wavelength of 100-350 nm and a power density of 1-15 mW/cm² is directed to the contact surface with the substrate and provided for 0.6-15 minutes at a temperature of 1-140°C and normal pressure to obtain an amorphous silicon layer with thicnkess of 50-400 nm. In a particular embodiment of the invention, sapphire is used as the substrate material.

EFFECT: simplifying the technology, reducing production costs, enhancing safety in the implementation of the technological process of applying a thin layer of amorphous silicon on the substrate.

2 cl, 1 ex