METHOD OF FORMING AMORPHOUS SILICON THIN FILMS Russian patent published in 2018 - IPC C23C16/24 C23C16/452 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of forming thin films of amorphous silicon and to a device for performing it. Method is based on the precipitation of the decomposition products of the silane-containing gas mixture on a heated substrate, which is performed in the plasma of the high-frequency discharge in the discharge chamber in isolation from the deposition chamber, followed by the formation of supersonic jets from the decomposition products, flowing into a vacuum deposition chamber through a system of supersonic nozzles, installed in the wall of the discharge chamber. Discharge chamber is additionally supplied with argon towards the system of supersonic nozzles, and the supply of the silane-containing gas mixture is carried out in a direction perpendicular to the supply of argon along the surface of the upper wall of the discharge chamber, which contains a system of supersonic nozzles. Ratio of the rate of supply of argon to the feed rate of the silane-containing gas mixture is selected from the condition for obtaining a silane concentration C=1.5÷2.5%.

EFFECT: as a result, the quality of the amorphous film is increased by eliminating the settling of particles on the walls of the working chamber of the plasma torch and reducing the probability of reactions of formation of high-molecular compounds of silane and dust particles.

2 cl, 2 dwg, 1 ex