FIELD: physics.
SUBSTANCE: method includes: a step of applying a paste-like electrode substance to an antireflection film formed on the side of the light-receiving surface of the semiconductor substrate having, at least, a pn-junction, wherein the said electrode substance comprises a conductive material; and a step of calcinating the electrode including a local heat treatment for supplying heat such that, at least, a portion of the conductive material is calcinated by irradiating only the portion of the electrode material with a laser beam, and a heat treatment of the entire object to heat the semiconductor substrate to a temperature below 800°C.
EFFECT: long-term reliability and high efficiency.
5 cl, 1 tbl, 5 dwg
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Authors
Dates
2017-11-23—Published
2013-08-23—Filed