FIELD: power engineering.
SUBSTANCE: solar element, on which a passivating film is formed on a crystal silicon substrate, which has at least a p-n transition, and an electrode is formed by printing and thermal treatment of conducting paste. The specified solar element comprises: the first electrode, comprising an extraction electrode, which extracts photogenerated carriers from the silicon substrate, formed so that it contacts with the silicon substrate; and the second electrode, comprising a collector electrode, which collects carriers accumulated on the extraction electrode, formed so that it contacts with the first electrode. Apart from a point of contact between the first electrode and the second electrode at least the second electrode contacts with the silicon substrate only partially or never contacts.
EFFECT: invention reduces losses of charge at electrode/silicon borders, increases short-circuit current and voltage of an open circuit, gives improved characteristics to a solar element and reduces costs.
7 cl, 7 dwg
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Authors
Dates
2015-12-20—Published
2011-12-01—Filed