METHOD OF MANUFACTURING SOLAR ELEMENT AND SOLAR ELEMENT MANUFACTURED BY THIS METHOD Russian patent published in 2017 - IPC H01L31/04 H01L31/18 

FIELD: physics.

SUBSTANCE: method of manufacturing a solar element includes forming a high-performance antireflective film containing silicon nitride, wherein the said antireflective film has an excellent passivating effect. In a method of manufacturing a solar element according to the invention, a plasma chemical deposition device (100) is used from the gas phase to form the first silicon nitride film on the semiconductor substrate (102), while moving the semiconductor substrate (102) in the deposition chamber (101) using a plasma flow from the first plasma chamber (111), and further formation of the second silicon nitride film that has a composition different from the said first silicon nitride film using a plasma flow from the second plasma chamber (112), into which gaseous ammonia and gaseous silane were introduced at a different expenditure ratio than in the first plasma chamber (111). The plasma chemical deposition device (100) from the gas phase is provided with a precipitation chamber (101); plasma chambers (111, 112) having excitation portions (111a, 112a) that excite ammonia gas, and reaction activating portions (111b, 112b) that activate the excited gaseous ammonia by introducing therein a gaseous silane; and a flow regulator (113) that controls the ratio of gaseous ammonia to gaseous silane for each of the said plasma chambers (111, 112).

EFFECT: invention provides high performance of forming an antireflective film and an improved antireflection effect.

6 cl, 1 tbl, 5 dwg