FIELD: physics.
SUBSTANCE: method of solar cell fabrication includes the phases of creation of pn-transition in a semiconductor substrate, creation of passivating layer on the light receiving surface and/or on the light non-receiving surface of semiconductor substrate and creation of the power take-off electrodes on the light receiving surface and on the light non-receiving surface. The passivating layer is formed by the aluminium oxide film with the width up to 40 nm, and the electrode is formed by burning of conducting paste at 500-900°C within the time from 1 second up to 30 minutes with formation of the baked product, which will penetrate through a passivating layer, forming an electrical contact between the electrode and substrate. As a result of creation of aluminium oxide film with the specified width on the substrate surface it is possible to achieve the excellent characteristics of passivation and excellent electrical contact between silicon and electrode only by burning of the conductor paste, that is a standard technology. Besides the phase of burning, which was necessary to achieve the effects of passivation of aluminium oxide film in the past, can be avoided.
EFFECT: cost minimising.
6 cl, 7 dwg
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Authors
Dates
2014-10-27—Published
2010-05-24—Filed