FIELD: chemistry.
SUBSTANCE: method involves thermovacuum spraying of vanadium onto a substrate at room temperature, followed by oxidation in air to form an oxide film. Vanadium coating, thickness 30≤d≤40 nm, doped with impurities W, Si, Al, produced from the evaporator is located inside the vacuum installation by doing one of the following:
,
where H=60 mm -specifies the line size of the substrate, l=280-380 mm - distance between the evaporator and the substrate during deposition speed 0.5-1 nm/s Then carry out oxidation in air at a temperature of 300-480°C to the formation of vanadium oxide film on a substrate with controlled quantities of surface resistance in the range⋅ 1-2,4⋅106 Ohm/cm2. Invention allows to get the loop thermal hysteresis width 22-24°C, shifted by ~ 10°C in the direction of room temperature, with a jump of resistance inside the loop and a half orders of magnitude that when thermostating provides internal memory mode.
EFFECT: improved properties.
5 dwg, 1 ex, 2 tbl
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Authors
Dates
2017-06-27—Published
2016-04-29—Filed