FIELD: technological processes.
SUBSTANCE: invention can be used in the technology of high-temperature superconducting (HTSC) wires of a new generation (using flexible dielectric carriers) with applications both in high-current superconducting technology (for example, superconducting transmission lines, current limiters) and in low-current superconductor electronics (for example, superconducting magnetic flux transformers and axial gradiometers for superconducting quantum magnetometers (SQUIDs), superconducting information transmission lines). The claimed method makes it possible to obtain samples with a critical temperature of not less than 88 K and a critical current density at 77.4 K of not less than 7⋅104⋅ A/cm2.
EFFECT: solving the technological problem of depositing a thin film on a substrate of crystalline quartz.
10 cl, 6 dwg
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