FIELD: microelectronics.
SUBSTANCE: method of SQUID formation with submicron Josephson junctions mounted in high-temperature superconductor film is characterized by forming at least two intermediate SQUID topologies of different external dimensions of circuits. Reference scales are comb with pins galvanically connected through bridge with one of current suppliers and great bulk. One of reference scales is placed between intermediate topologies, and the others are outside. Formation of basic topology is begun by intermediate SQUID topology of greater area. Width of electronic exposure field perpendicular to bicrystal boundary is fixed equal to 0.4-0.6, and parallel to bicrystal boundary - equal to 1.0-1.5 of Josephson junctions width of intermediate topology.
EFFECT: improved reproducibility and enhanced electrophysical characteristics of formed junctions.
8 cl, 3 dwg, 2 tbl
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