FIELD: electricity.
SUBSTANCE: method for manufacturing electrically isolated microcircuit resistors consisting in manufacturing ocontact pads on epitaxial structures gallium arsenide, inserting helium ions with an energy of 30-150 keV and a dose of 1.2-1.4 mcC/cm2 for forming insulation areas, applying photoresist mask with subsequent formation of windows in the photoresist mask for reinserting the helium ions with an energy of 30-150 keV and a dose of 6-12 mcC/cm2.
EFFECT: increased thermal stability and increased breakdown voltage of the insulating layers of microcircuits on gallium arsenide.
10 dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| CONSTRUCTION AND METHOD OF MANUFACTURING INTEGRATED CIRCUITS WITH COMBINED INSULATION | 1980 |
|
SU824824A1 |
| METHOD OF MANUFACTURING INTEGRATED CIRCUITS | 1984 |
|
SU1195862A1 |
| METHOD FOR PRODUCING BIPOLAR INTEGRATED CIRCUITS WITH POLYSILOCON RESISTOR | 1990 |
|
SU1819070A1 |
| GALLIUM ARSENIDE INTEGRATED CIRCUIT MANUFACTURING METHOD | 1987 |
|
SU1491262A1 |
| METHOD OF MANUFACTURING SEMICONDUCTING DEVICES WITH NEAR-WALL <P-N>-TRANSITIONS | 1981 |
|
SU1072666A1 |
| METHOD FOR MANUFACTURING INTER-INSTRUMENT INSULATION OF HIGH-POWER GALLIUM NITRIDE TRANSISTORS | 2021 |
|
RU2761051C1 |
| METHOD OF MANUFACTURING INTEGRATED CIRCUITS WITH SIDE DIELECTRIC INSULATION | 1982 |
|
SU1060066A1 |
| METHOD FOR FORMING SILVER-CONTAINING BIOCOMPATIBLE COATING ON TITANIUM IMPLANTS | 2017 |
|
RU2669402C1 |
| LATERAL BIPOLAR TRANSISTOR BASED ON “SILICON ON INSULATOR” STRUCTURES AND THE METHOD FOR ITS MANUFACTURE | 2021 |
|
RU2767597C1 |
| METHOD FOR PRODUCING PERFECT EPITAXIAL SILICON LAYERS WITH BURIED n- LAYERS | 2003 |
|
RU2265912C2 |
