FIELD: microelectronics.
SUBSTANCE: proposed method for producing perfect ion-doped silicon structures or substrates for epitaxial growth includes oxidation and photolithography operations to localize n+ regions, ion implantation of antimony, and diffused redistribution of dope in oxidizing medium, removal of oxide, and epitaxial growth. Antimony is implanted under combined conditions at energy E = 60 - 100 keV, dose rate D = 400 - 2000 μKl/cm2 (Φ = 2.5·1015 - 1.25·1016 cm-2) and scanning current density Jsc = 6 15 μA/cm2 ensuring ion-stimulated crystallization of surface amorphous layer. Further redistribution of implanted dope along with formation of microrelief on structure surface results in temperature T = 1493 K (1220 °C) within time t = 120 - 900 minutes, first within 120 - 120 minutes in dry oxygen medium, then in gas mixture of dry nitrogen incorporating 5 - 15% of dry oxygen.
EFFECT: reduced flaw density, enhanced quality of substrates for epitaxial growth.
1 cl, 9 dwg, 2 tbl
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