FIELD: electronic engineering. SUBSTANCE: side insulation of bipolar transistors is formed on silicon substrate by selective oxidation of epitaxial layer. Upon production of thin insulating layer, polysilicon resistor region of desired configuration is formed on surface of insulated regions, passivating layer is made above transistor and resistor region, and contact cuts are provided to transistor and resistor regions. Transistor base region and contact regions of polysilicon resistor are doped through respective mask. Then mask with cuts is formed above emitter and resistor region except for contact cuts for it, and p-dope is introduced in turn through passivating layer to obtained desired conductivity of high-resistance part of polysilicon resistor; then n-dope is introduced which penetrates through passivating layer to form emitter. Upon removal of mask, embedded dopes are annealed. EFFECT: improved yield, reduced difference in ratings of high-value polysilicon resistors. 9 dwg
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