GALLIUM ARSENIDE INTEGRATED CIRCUIT MANUFACTURING METHOD Russian patent published in 1996 - IPC

Abstract SU 1491262 A1

FIELD: electronic engineering. SUBSTANCE: method for producing monolithic gallium arsenide integrated circuits involves formation of active-region insulation by proton bombardment; photoresist mask is deposited gallium arsenide anodic oxide pre-formed during formation of transistor active channel; during proton bombardment, photoresist mask is used as shielding coat of active regions. EFFECT: increased yield of serviceable products due to improvement of electrical characteristics of transistors. 7 dwg

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SU 1 491 262 A1

Authors

Belokhvostikova L.S.

Dedinets V.E.

Dubrovskaja L.A.

Filatov A.L.

Dates

1996-01-10Published

1987-05-27Filed