FIELD: electronic engineering. SUBSTANCE: method for producing monolithic gallium arsenide integrated circuits involves formation of active-region insulation by proton bombardment; photoresist mask is deposited gallium arsenide anodic oxide pre-formed during formation of transistor active channel; during proton bombardment, photoresist mask is used as shielding coat of active regions. EFFECT: increased yield of serviceable products due to improvement of electrical characteristics of transistors. 7 dwg
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Authors
Dates
1996-01-10—Published
1987-05-27—Filed